Samsung Galaxy S6 to Feature New Type of Flash Memory

It looks like the tech giant’s flagship smartphone is already outdated, if people have started the rumors regarding the next member of the Galaxy line, which is said to come with next gen flash memory.

Smartphone lags are more often caused by insufficient RAM rather than internal storage speed that’s not fast enough. However, that doesn’t mean that mobile devices couldn’t use an upgrade in the form of snappier flash memory. As a matter of fact, a lot of things could be better if they used next-gen storage, from flash drives to SSDs.

UFS (Universal Flash Storage), as this next-gen memory is called, brings together a high speed SSD and low power eMMC. Project Zero (for the time being, this is the codename of the Samsung Galaxy S6), will be built from the ground up, or at least that’s what some recently surfaced rumors suggest. In this context, it’s only logical that the memory gets upgraded, as well.

By using UFS, the Galaxy S6 will be able to reach greater transfer speeds (of up to 1.2Gbps), while also requiring less energy. As Internet bandwidth increases, taking the internal storage’s speed higher makes perfect sense.

Other rumors refer to a dual edge display, much like the one used in the Note Edge. To keep up with the times, the Galaxy S6 would have to come with a Quad HD display with a resolution of 2560 x 1440 pixels (but no one has speculated on the diagonal of this smartphone, even though it’s almost certain that it will meddle in phablet territory), a 64-bit Qualcomm Snapdragon 810 Octa core processor and an Adreno 430 GPU. As far as the cameras are concerned, the S6 should be equipped with a 5MP in the front and a 16 or 20MP in the back. Three or 4GB of RAM and 32, 64 or 128GB of internal storage should be enough for anyone on this planet. In other words, get ready to say goodbye to 16GB smartphones in the near future!

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